IRF540, Datasheet PDF, Specification, Circuits, Pinout, Equivalent, Alternatives
For the high-current switching application, the IRF540 MOSFET is one of the popular choice. The IRF540 stands out for its fast switching, rugged device design, low on resistance and cost-effectiveness.
In this article, we have discussed IRF540, check its pinout, equivalent, practical applications, distinctive features, as well as instruction on when and where to employ this high-current N-channel MOSFET.
Main Features:
Maximum Rated voltage across Drain & Source → Vdss=100V
Maximum operating current → Id = upto 28Amps
Gate voltage → VGS(th) = 2V to 4V
Resistance → R(DS)(on)= 77.0 mΩ or 0.077 Ω
Primary function → High current high speed switching.
Parameter overview:
The IRF540 MOSFET is designed for high-current application, having a remarkable 100 Volt drain-to-source voltage limit. Its gate trigger voltage, starting from up to 4V, making it suited to a low-voltage switching control applications as well. As a result of its exceptionally low drain-to-source resistance, the device has an operating current capacity of 100 Amp. With industry standard footprints, this device is available in surface mount and through-hole packages for ease of design.
Check! this popular n channel MOSFET IRF3205
All Features:
| Package | TO-220 | Transistor |
|---|---|---|
| Component | N-Channel | MOSFET |
| Drain to Source Voltage | 100v | Max. |
| Continues Drain Current | 28A | Max. |
| Voltage Required to Conduct | 2V to 4V | Min. (threshold voltage) |
| Drain Source Resistance | 0.077Ω | On state |
| Pulsed Drain Current | 110A | Max. |
| Power Dissipation | 50W | Max. |
| Switching time | @ Vdd=50V, Id=17A, Vgs=10V | |
| Rise time | 44nS | Typ. |
| Turn-On delay | 11nS | Typ. |
| Turn-Off delay | 53nS | Typ. |
| Fall time | 43nS | Typ. |
| Internal Inductance & Capacitance | - | Check Datasheet below |
| Operating temperature | -55 to +175 | Degree Centigrade |
The below plot showing Typical Transfer Characteristics of MosFet:
-Id (Vs) -Vgs, @ Vds=50V, Pulsed Drain current @20µs with junction temperature maintained at 25°C and 175°C. It can be observed that this MOSFET can be used at as low as 2V-4V for lower current application of up to 5Amp. But for higher Load. Current you need to drive the gate with an appropriate voltage (Vgs) ensuring guaranteed optimal switching performance.
For detail characteristic like Temp. vs Id, Vds vs Ids, check and refer to the IRF540 Datasheet below.
[pdfjs-viewer url=https://somanytech.com/wp-content/uploads/2023/10/IRF540_InternationalRectifier_compressed.pdf viewer_width=800px viewer_height=900px fullscreen=false download=false print=false]
When working with the MOSFET IRF540 circuit, it’s essential to follow recommended practices, including:
Review the datasheet for detailed electrical characteristics and guidelines, especially when implementing N-channel applications. And ensure proper heat sinking to dissipate any generated heat effectively.
Application/ Uses:
High ruggedness and current capability make it an industry-standard choice. Widely available through distribution partners, ideal for 50W applications and drop-in replacements due to standard pinout.
Some of the application of IRF540 are: DC motors in reverse direction, inverters, SMPS (Switched-Mode Power Supplies), lighting systems, load switches, and even battery-powered devices, reverse polarity protection.
Alternatives & Replacement for IRF450 are: IRF3205, IRFB7440, CJ340, etc
IR540 Datasheet PDF:
Download IR540 datasheet PDF here. (link)
